Hayat MM, Ramirez M , Saleh BEA, Teich MC and S.N Torres
IEEE PHOTONICS TECHNOLOGY LETTERS 17, 10 (2005)
A channel-capacity metric is introduced for assessing the performance of single-photon avalanche photodiodes (SPADs) when used as detectors in laser communication systems. This metric is employed to theoretically optimize, with respect to the device structure and operating voltage, the performance of SPADs with simple InP or In0.52Al0.48As-InP heterojunction multiplication regions. As the multiplication-region width increases, an increase is predicted in both the peak and the full-width at half-maximum of the channel capacity curve versus the normalized excess voltage. Calculations also show the existence of an optimal In0.52Al0.48As-InP heterojunction multiplication region that maximizes the peak channel capacity beyond that of InP.