Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si(100) substrate

M. Paulraj, R. Saavedra, E. Valderrama , E. Wyndham , G. Avaria , H. Bhuyan , H. Chuaqui , I. Mitchell and M. Favre
JOURNAL OF PHYSICS D-APPLIED PHYSICS 40, 1 (2007)

ABSTRACT

We report the investigation of high energy ion beam irradiation on Si (100) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm.

DOI: http://dx.doi.org/10.1088/0022-3727/40/1/003



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